IGBT 650V H-Bridge • High speed IGBT 5
Basic information:
Marking manufacturer | APTGTQ100H65T3G |
Factory Lead Time | 42wk-49wk [wk] |
Kategorie | IGBT Full Silicon |
Configuration: | Bridge 1f |
Construction: | 4*(IGBT+D) |
Number of circuits (in case) | 4 ks |
Case type: | Modul |
Case [inch] : | SP3F |
Type of material: | Si-Silicon |
RoHS | Yes |
REACH | No |
NOVINKA | A |
RoHS1 | Ano |
Packaging and weight:
Unit: | pcs |
Weight: | 125 [g] |
Type of packaging: | BOX |
Small package (Number of units): | 1 |
Electro-physical parameters:
IFAV / IC (Tc/Ta=25°C) | 100 [A] |
Idc max (Tc/Ta=80÷89°C) | 60 [A] |
Uisol (@25°C/1min/50Hz) | 4000 [V] |
UF (maximum forward voltage) | 2.2 [VDC] ?Test conditions: Ta=25°C, IF=In/Imax |
UCE (sat) (@25°C) | 2.2 [V] |
Pmax with heatsink (TC=25°C) | 250 [W] |
trr recovery time (If=Inom.,@25°C) | 46 [ns] |
tr (Turn-on / rise time) | 15 [ns] |
tf/tq (Turn-off / fall time) | 18 [ns] |
Qg (Total Gate Charge) | 240 [nC] |
Cin (Input Capacitance) | 6000 [pF] |
Thermal and mechanical parameters:
Dimensions (L*W*H) [mm]: | 73x43x12 |
Tmin (minimum working temperature) | -40 [°C] |
Tmax (maximum working temperature) | 175 [°C] |
Rthjc1 IGBT | 0.6 [°C/W] |
Rthjc2 Dioda, Tyristor | 0.7 [°C/W] |
RM - Pitch pins | 3.81 [mm] |
RM1 - Spacing of rows | 38 [mm] |
L - Length | 73.4 [mm] |
W - Width | 42.5 [mm] |
H - Height | 12 [mm] |
Dimensions of outlets | 1,35 [mm] |
Lv - Length of outlets | 5.3 [mm] |